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TSM7ND60CI

TSM7ND60CI Taiwan Semiconductor Corporation

TSM7ND60CI_A1804.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 7A ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V
auf Bestellung 3964 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.67 EUR
10+ 6.46 EUR
100+ 5.22 EUR
500+ 4.64 EUR
1000+ 3.98 EUR
2000+ 3.74 EUR
Mindestbestellmenge: 4
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Technische Details TSM7ND60CI Taiwan Semiconductor Corporation

Description: MOSFET N-CH 600V 7A ITO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: ITO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V.

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TSM7ND60CI Hersteller : Taiwan Semiconductor TSM7ND60CI_A1804-1918853.pdf LDO Voltage Regulators 600V, 7A, Single N-Channel Power MOSFET
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