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TSM80N08CZ C0G

TSM80N08CZ C0G Taiwan Semiconductor


tsm80n08_c15.pdf Hersteller: Taiwan Semiconductor
75V N-Channel Power MOSFET
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Technische Details TSM80N08CZ C0G Taiwan Semiconductor

Description: MOSFET N-CHANNEL 75V 80A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Power Dissipation (Max): 113.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V.

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TSM80N08CZ C0G TSM80N08CZ C0G Hersteller : Taiwan Semiconductor Corporation TSM80N08_C15.pdf Description: MOSFET N-CHANNEL 75V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 91.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 30 V
Produkt ist nicht verfügbar
TSM80N08CZ C0G TSM80N08CZ C0G Hersteller : Taiwan Semiconductor TSM80N08_C15-1918998.pdf MOSFET 75V 80A Single N-Cha nnel Power MOSFET
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