TSM900N06CW RPG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.33 EUR |
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Technische Details TSM900N06CW RPG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, Power Dissipation (Max): 7.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V.
Weitere Produktangebote TSM900N06CW RPG nach Preis ab 0.3 EUR bis 1.19 EUR
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TSM900N06CW RPG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 60V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V |
auf Bestellung 10020 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM900N06CW RPG | Hersteller : Taiwan Semiconductor | MOSFET 60V, 5A, Single N-Channel Power MOSFET |
auf Bestellung 3987 Stücke: Lieferzeit 14-28 Tag (e) |
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| TSM900N06CW RPG | Hersteller : TAI-SEM |
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG TSM900N06CW TTSM900n06cw Anzahl je Verpackung: 25 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM900N06CW RPG | Hersteller : Taiwan Semiconductor |
 Trans MOSFET N-CH 60V 11A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| TSM900N06CW RPG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223 Gate charge: 9.3nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 7A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 4.17W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TSM900N06CW RPG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223 Gate charge: 9.3nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT223 Drain-source voltage: 60V Drain current: 7A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 4.17W Polarisation: unipolar |
Produkt ist nicht verfügbar |