TSM900N10CH X0G Taiwan Semiconductor
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Technische Details TSM900N10CH X0G Taiwan Semiconductor
Description: MOSFET N-CH 100V 15A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Weitere Produktangebote TSM900N10CH X0G
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| TSM900N10CH X0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL Gate charge: 9.3nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: IPAK SL Drain-source voltage: 100V Drain current: 9.5A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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TSM900N10CH X0G | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 100V 15A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
Produkt ist nicht verfügbar |
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TSM900N10CH X0G | Hersteller : Taiwan Semiconductor | MOSFET 100V, 15A, Single N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| TSM900N10CH X0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL Gate charge: 9.3nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: IPAK SL Drain-source voltage: 100V Drain current: 9.5A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar |
Produkt ist nicht verfügbar |