TSP10H200S Taiwan Semiconductor
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Technische Details TSP10H200S Taiwan Semiconductor
Description: DIODE SCHOTTKY 200V 10A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 910 mV @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V.
Weitere Produktangebote TSP10H200S
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TSP10H200S | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE SCHOTTKY 200V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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TSP10H200S | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 10A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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| TSP10H200S | Hersteller : Taiwan Semiconductor |
Schottky Diodes & Rectifiers Diode, Low VF Trench Schottky, 10A, 200V |
Produkt ist nicht verfügbar |