UG8JTHE3/45 Vishay Semiconductors
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Technische Details UG8JTHE3/45 Vishay Semiconductors
Description: DIODE GEN PURP 600V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote UG8JTHE3/45
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UG8JTHE3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V Qualification: AEC-Q101 |
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