UPA2210T1M-T1-AT Renesas Electronics America Inc


Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 20V 7.2A 8VSOF
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-VSOF
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
auf Bestellung 180000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
427+1.72 EUR
Mindestbestellmenge: 427
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Technische Details UPA2210T1M-T1-AT Renesas Electronics America Inc

Description: MOSFET P-CH 20V 7.2A 8VSOF, Packaging: Bulk, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-VSOF, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V.