uPA810T-T1-A CEL
Hersteller: CEL
Description: NPN SILICON AMPLIFIER AND OSCILL
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 6-SuperMiniMold
Part Status: Last Time Buy
Description: NPN SILICON AMPLIFIER AND OSCILL
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: 6-SuperMiniMold
Part Status: Last Time Buy
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 5.2 EUR |
| 9000+ | 4.16 EUR |
| 15000+ | 3.64 EUR |
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Technische Details uPA810T-T1-A CEL
Description: NPN SILICON AMPLIFIER AND OSCILL, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Gain: 9dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V, Frequency - Transition: 4.5GHz, Noise Figure (dB Typ @ f): 1.2dB @ 1GHz, Supplier Device Package: 6-SuperMiniMold, Part Status: Last Time Buy.
Weitere Produktangebote uPA810T-T1-A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| uPA810T-T1-A |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |