US1GHR3G

US1GHR3G Taiwan Semiconductor


us1m-07r2g.pdf Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 400V 1A 50ns Automotive 2-Pin SMA T/R
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Technische Details US1GHR3G Taiwan Semiconductor

Description: DIODE GEN PURP 400V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V, Qualification: AEC-Q101.

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US1GHR3G US1GHR3G Hersteller : Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar