US1J-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.65 EUR |
| 3000+ | 0.45 EUR |
| 7500+ | 0.23 EUR |
| 15000+ | 0.2 EUR |
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Technische Details US1J-AQ Diotec Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 1A, Max. load current: 6A, Reverse recovery time: 75ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Case: SMA, Max. forward voltage: 1.4V, Max. forward impulse current: 30A, Leakage current: 5µA, Kind of package: reel; tape, Application: automotive industry, Anzahl je Verpackung: 10 Stücke.
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Description: DIODE GEN PURP 600V 1A SMA Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
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