US1M R3G

US1M R3G Taiwan Semiconductor Corporation


US1A%20SERIES_N2102.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
auf Bestellung 14400 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1800+0.42 EUR
3600+ 0.38 EUR
5400+ 0.36 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 1800
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Technische Details US1M R3G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 1KV 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1, Voltage Coupled to Current - Reverse Leakage @ Vr: 1000.

Weitere Produktangebote US1M R3G nach Preis ab 0.3 EUR bis 1.12 EUR

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US1M R3G US1M R3G Hersteller : Taiwan Semiconductor US1A%20SERIES_N2102.pdf Rectifiers 75ns, 1A, 1000V, High Efficient Recovery Rectifier
auf Bestellung 3048 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
57+ 0.93 EUR
100+ 0.6 EUR
500+ 0.51 EUR
1000+ 0.38 EUR
3600+ 0.33 EUR
7200+ 0.3 EUR
Mindestbestellmenge: 47
US1M R3G US1M R3G Hersteller : Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
auf Bestellung 15915 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
28+ 0.96 EUR
100+ 0.67 EUR
500+ 0.52 EUR
Mindestbestellmenge: 24