VB10150C-E3/4W

VB10150C-E3/4W Vishay General Semiconductor - Diodes Division


v10150c.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 7980 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.89 EUR
12+ 2.36 EUR
100+ 1.84 EUR
500+ 1.56 EUR
1000+ 1.27 EUR
2000+ 1.19 EUR
5000+ 1.14 EUR
Mindestbestellmenge: 10
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Technische Details VB10150C-E3/4W Vishay General Semiconductor - Diodes Division

Description: DIODE ARR SCHOTT 150V 5A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 5A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 150 V.

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