VS-10ETF12STRL-M3 Vishay Semiconductors
auf Bestellung 706 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.29 EUR |
| 15+ | 3.56 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.39 EUR |
| 800+ | 2.38 EUR |
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Technische Details VS-10ETF12STRL-M3 Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 10A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 310 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote VS-10ETF12STRL-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-10ETF12STRL-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.2KV 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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