VS-10ETS08FP-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GP 800V 10A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
auf Bestellung 899 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.3 EUR |
| 50+ | 4.27 EUR |
| 100+ | 3.51 EUR |
| 500+ | 2.97 EUR |
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Technische Details VS-10ETS08FP-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 10A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 800 V.
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VS-10ETS08FP-M3 | Hersteller : Vishay |
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auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-10ETS08FP-M3 | Hersteller : Vishay |
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VS-10ETS08FP-M3 | Hersteller : VISHAY |
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VS-10ETS08FP-M3 | Hersteller : Vishay Semiconductors |
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VS-10ETS08FP-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 10A; tube; Ifsm: 160A; TO220FP Max. off-state voltage: 0.8kV Load current: 10A Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 160A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Max. forward voltage: 1.1V Type of diode: rectifying Leakage current: 0.5mA |
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