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VS-1EFH01HM3/I

VS-1EFH01HM3/I Vishay Semiconductors

vs-1efh01hm3.pdf Hersteller: Vishay Semiconductors
Rectifiers 1A 100V Hyprfst Rcfr AEC-Q101 Qualified
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
50+1.04 EUR
71+ 0.74 EUR
143+ 0.36 EUR
1000+ 0.25 EUR
2500+ 0.23 EUR
10000+ 0.19 EUR
20000+ 0.18 EUR
Mindestbestellmenge: 50
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Technische Details VS-1EFH01HM3/I Vishay Semiconductors

Description: DIODE GEN PURP 100V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 16 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.

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VS-1EFH01HM3/I VS-1EFH01HM3/I Hersteller : Vishay General Semiconductor - Diodes Division vs-1efh01hm3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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