VS-1EFU06HM3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.25 EUR |
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Technische Details VS-1EFU06HM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 32 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote VS-1EFU06HM3/I nach Preis ab 0.27 EUR bis 1.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-1EFU06HM3/I | Hersteller : Vishay Semiconductors | Rectifiers If(AV) 1A Vr 600V AEC-Q101 Qualified |
auf Bestellung 127319 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-1EFU06HM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219AB Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 36349 Stücke: Lieferzeit 21-28 Tag (e) |
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VS-1EFU06HM3/I | Hersteller : VISHAY | VS-1EFU06HM3/I SMD universal diodes |
Produkt ist nicht verfügbar |