auf Bestellung 101 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 16.25 EUR |
| 10+ | 15.76 EUR |
| 100+ | 12.38 EUR |
| 500+ | 10.79 EUR |
| 1000+ | 10.66 EUR |
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Technische Details VS-1N3671RA Vishay Semiconductors
Description: DIODE GEN PURP 800V 12A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 800 µA @ 800 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-1N3671RA | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 12A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Current - Reverse Leakage @ Vr: 800 µA @ 800 V |
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