VS-1N3673A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 600 µA @ 1000 V
Description: DIODE GEN PURP 1KV 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 600 µA @ 1000 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.56 EUR |
10+ | 9.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-1N3673A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 12A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A, Current - Reverse Leakage @ Vr: 600 µA @ 1000 V.
Weitere Produktangebote VS-1N3673A
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
VS-1N3673A | Hersteller : Vishay Semiconductors | Rectifiers 1000 Volt 12 Amp |
Produkt ist nicht verfügbar |