VS-1N5819TR

VS-1N5819TR Vishay General Semiconductor - Diodes Division


VS-1N5819(-M3).pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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Technische Details VS-1N5819TR Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 40V 1A DO204AL, Packaging: Tape & Reel (TR), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 mA @ 40 V.

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VS-1N5819TR VS-1N5819TR Hersteller : Vishay General Semiconductor - Diodes Division VS-1N5819(-M3).pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar