Technische Details VS-20ETF06SPBF Vishay Semiconductors
Description: DIODE GEN PURP 600V 20A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.
Weitere Produktangebote VS-20ETF06SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
VS-20ETF06SPBF | Hersteller : Vishay |
 Rectifier Diode Switching 600V 20A 160ns 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
|
| VS-20ETF06SPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |