VS-20ETF10-M3 Vishay Semiconductors
auf Bestellung 66 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 7.85 EUR |
10+ | 6.63 EUR |
100+ | 4.19 EUR |
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Technische Details VS-20ETF10-M3 Vishay Semiconductors
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 20A; tube; Ifsm: 320A; TO220AC; Ir: 6mA, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 20A, Reverse recovery time: 95ns, Semiconductor structure: single diode, Features of semiconductor devices: fast switching; glass passivated, Case: TO220AC, Kind of package: tube, Heatsink thickness: 1.14...1.4mm, Max. forward impulse current: 320A, Max. forward voltage: 1.31V, Leakage current: 6mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote VS-20ETF10-M3 nach Preis ab 3.95 EUR bis 8.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-20ETF10-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
auf Bestellung 6418 Stücke: Lieferzeit 21-28 Tag (e) |
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VS-20ETF10-M3 | Hersteller : Vishay/IR | 20ETF10 Fast Soft Recovery 20A 1000V TO-220AC |
auf Bestellung 2517 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-20ETF10-M3 | Hersteller : Vishay | Diode Switching 1KV 20A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
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VS-20ETF10-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 20A; tube; Ifsm: 320A; TO220AC; Ir: 6mA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 20A Reverse recovery time: 95ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.4mm Max. forward impulse current: 320A Max. forward voltage: 1.31V Leakage current: 6mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-20ETF10-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 20A; tube; Ifsm: 320A; TO220AC; Ir: 6mA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 20A Reverse recovery time: 95ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.4mm Max. forward impulse current: 320A Max. forward voltage: 1.31V Leakage current: 6mA |
Produkt ist nicht verfügbar |