Technische Details VS-20ETF10FP-M3 Vishay
Description: DIODE GP 1KV 20A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 95 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Weitere Produktangebote VS-20ETF10FP-M3
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VS-20ETF10FP-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1KV 20A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
Produkt ist nicht verfügbar |
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VS-20ETF10FP-M3 | Hersteller : Vishay Semiconductors | Rectifiers New Input Diodes - FULLPAK-220-e3 |
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| VS-20ETF10FP-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 20A; tube; Ifsm: 320A; TO220FP-2; 95ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 20A Reverse recovery time: 95ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.31V |
Produkt ist nicht verfügbar |