VS-20ETF10STRR-M3 Vishay General Semiconductor - Diodes Division


vs-20etf08s-m3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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Technische Details VS-20ETF10STRR-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 1KV 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.

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VS-20ETF10STRR-M3 VS-20ETF10STRR-M3 Hersteller : Vishay Semiconductors vs-20etf08s-m3.pdf Rectifiers New Input Diodes - D2PAK-e3
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