VS-2EFH01-M3/I Vishay Semiconductors
auf Bestellung 18411 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.11 EUR |
| 67+ | 0.79 EUR |
| 148+ | 0.35 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.24 EUR |
| 10000+ | 0.21 EUR |
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Technische Details VS-2EFH01-M3/I Vishay Semiconductors
Description: DIODE GEN PURP 100V 2A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 24 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Weitere Produktangebote VS-2EFH01-M3/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VS-2EFH01-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 2A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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