Technische Details VS-30ETH06-1-M3 Vishay
Description: DIODE GEN PURP 600V 30A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote VS-30ETH06-1-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-30ETH06-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 30A TO262AAPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-30ETH06-1-M3 | Hersteller : Vishay Semiconductors |
Rectifiers 600V 30A IF TO-262AA 200A IFSM |
Produkt ist nicht verfügbar |