VS-30ETH06FP-F3 Vishay Semiconductors
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Technische Details VS-30ETH06FP-F3 Vishay Semiconductors
Description: DIODE GP 600V 30A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 23 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote VS-30ETH06FP-F3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-30ETH06FP-F3 | Hersteller : Vishay |
 Rectifier Diode Switching 600V 30A 35ns 2-Pin(2+Tab) TO-220ACFP Tube |
Produkt ist nicht verfügbar |
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VS-30ETH06FP-F3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 30A TO220-2FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |