VS-30ETH06STRLPBF Vishay Semiconductors
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Technische Details VS-30ETH06STRLPBF Vishay Semiconductors
Description: DIODE GEN PURP 600V 30A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 28 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote VS-30ETH06STRLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-30ETH06STRLPBF | Hersteller : NXP Semiconductors |
 Diode Switching 600V 30A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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VS-30ETH06STRLPBF | Hersteller : Vishay |
Rectifier Diode Switching 600V 30A 35ns Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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VS-30ETH06STRLPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |