VS-30ETU12THN3 Vishay Semiconductors
auf Bestellung 799 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.69 EUR |
| 11+ | 4.73 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 2.73 EUR |
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Technische Details VS-30ETU12THN3 Vishay Semiconductors
Description: DIODE GEN PURP 30A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 220 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A, Current - Reverse Leakage @ Vr: 145 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote VS-30ETU12THN3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-30ETU12THN3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 30A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - Forward (Vf) (Max) @ If: 2.68 V @ 30 A Current - Reverse Leakage @ Vr: 145 µA @ 1200 V Qualification: AEC-Q101 |
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