VS-31DQ09GTR

VS-31DQ09GTR Vishay General Semiconductor - Diodes Division


VS-31DQ9,%2010G(-M3).pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 3.3A C-16
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.3A
Supplier Device Package: C-16
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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Technische Details VS-31DQ09GTR Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 90V 3.3A C-16, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 110pF @ 5V, 1MHz, Current - Average Rectified (Io): 3.3A, Supplier Device Package: C-16, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 90 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 90 V.