VS-4ESH01HM3/86A Vishay Semiconductors
auf Bestellung 1524 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
32+ | 1.66 EUR |
36+ | 1.48 EUR |
100+ | 1.11 EUR |
500+ | 0.88 EUR |
1000+ | 0.7 EUR |
1500+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-4ESH01HM3/86A Vishay Semiconductors
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 100V, Load current: 4A, Reverse recovery time: 31ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Capacitance: 24pF, Case: SMPC, Max. forward voltage: 0.79V, Max. forward impulse current: 130A, Leakage current: 10µA, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote VS-4ESH01HM3/86A nach Preis ab 0.91 EUR bis 1.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
VS-4ESH01HM3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 4A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
auf Bestellung 1315 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
VS-4ESH01HM3/86A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
VS-4ESH01HM3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 4A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
Produkt ist nicht verfügbar |
||||||||||||
VS-4ESH01HM3/86A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |