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VS-4ESH01HM3/86A

VS-4ESH01HM3/86A Vishay Semiconductors


vs-4esh01hm3.pdf Hersteller: Vishay Semiconductors
Rectifiers Hypfst Rct 4A 100V AEC-Q101
auf Bestellung 1524 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
32+1.66 EUR
36+ 1.48 EUR
100+ 1.11 EUR
500+ 0.88 EUR
1000+ 0.7 EUR
1500+ 0.66 EUR
Mindestbestellmenge: 32
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Technische Details VS-4ESH01HM3/86A Vishay Semiconductors

Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 100V, Load current: 4A, Reverse recovery time: 31ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Capacitance: 24pF, Case: SMPC, Max. forward voltage: 0.79V, Max. forward impulse current: 130A, Leakage current: 10µA, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote VS-4ESH01HM3/86A nach Preis ab 0.91 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
VS-4ESH01HM3/86A VS-4ESH01HM3/86A Hersteller : Vishay General Semiconductor - Diodes Division vs-4esh01hm3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
auf Bestellung 1315 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.51 EUR
100+ 1.15 EUR
500+ 0.91 EUR
Mindestbestellmenge: 16
VS-4ESH01HM3/86A Hersteller : VISHAY vs-4esh01hm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 4A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 24pF
Case: SMPC
Max. forward voltage: 0.79V
Max. forward impulse current: 130A
Leakage current: 10µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
VS-4ESH01HM3/86A VS-4ESH01HM3/86A Hersteller : Vishay General Semiconductor - Diodes Division vs-4esh01hm3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
VS-4ESH01HM3/86A Hersteller : VISHAY vs-4esh01hm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 4A
Reverse recovery time: 31ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 24pF
Case: SMPC
Max. forward voltage: 0.79V
Max. forward impulse current: 130A
Leakage current: 10µA
Kind of package: reel; tape
Produkt ist nicht verfügbar