VS-80EBU02HF4 Vishay Semiconductors
auf Bestellung 243 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.18 EUR |
10+ | 12.77 EUR |
100+ | 10.32 EUR |
250+ | 9.75 EUR |
375+ | 9.15 EUR |
1125+ | 8.11 EUR |
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Technische Details VS-80EBU02HF4 Vishay Semiconductors
Description: DIODE GEN PURP 200V 80A POWERTAB, Packaging: Tube, Package / Case: PowerTab®, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 40 ns, Technology: Standard, Current - Average Rectified (Io): 80A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A, Current - Reverse Leakage @ Vr: 50 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VS-80EBU02HF4 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 80A POWERTAB Packaging: Tube Package / Case: PowerTab® Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
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