VS-8ETH06STRLHM3

VS-8ETH06STRLHM3 Vishay General Semiconductor - Diodes Division


vs-8eth06shm3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details VS-8ETH06STRLHM3 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 8A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 22 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263 (D2Pak), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.

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VS-8ETH06STRLHM3 Hersteller : VISHAY vs-8eth06shm3.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
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