VS-8EWF12STR-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 2.52 EUR |
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Technische Details VS-8EWF12STR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 270 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote VS-8EWF12STR-M3 nach Preis ab 2.6 EUR bis 5.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-8EWF12STR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A D-PAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 5924 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWF12STR-M3 | Hersteller : Vishay Semiconductors | Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3 |
auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWF12STR-M3 | Hersteller : Vishay | Rectifier Diode Switching Si 1.2KV 8A 270ns 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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VS-8EWF12STR-M3 | Hersteller : Vishay | Rectifier Diode Switching Si 1.2KV 8A 270ns 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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VS-8EWF12STR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK Mounting: SMD Case: DPAK Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-8EWF12STR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK Mounting: SMD Case: DPAK Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |