VS-8EWS12S-M3 Vishay Semiconductors
auf Bestellung 5833 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.92 EUR |
| 10+ | 5.75 EUR |
| 75+ | 4.58 EUR |
| 525+ | 3.87 EUR |
| 1050+ | 3.2 EUR |
| 2550+ | 3.09 EUR |
| 5025+ | 3.02 EUR |
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Technische Details VS-8EWS12S-M3 Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: D-PAK (TO-252AA), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote VS-8EWS12S-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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VS-8EWS12S-M3 | Hersteller : Vishay |
 Diode Switching 1.2KV 8A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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| VS-8EWS12S-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube Case: DPAK Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-8EWS12S-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
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| VS-8EWS12S-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube Case: DPAK Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A |
Produkt ist nicht verfügbar |