Technische Details VS-APH3006L-M3 Vishay Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 26 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.
Weitere Produktangebote VS-APH3006L-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-APH3006L-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
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