VS-ETH1506-1-M3 Vishay Semiconductors
auf Bestellung 447 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.64 EUR |
| 18+ | 2.99 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.85 EUR |
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Technische Details VS-ETH1506-1-M3 Vishay Semiconductors
Description: DIODE GEN PURP 600V 15A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 29 ns, Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-262-3, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A, Current - Reverse Leakage @ Vr: 15 µA @ 600 V.
Weitere Produktangebote VS-ETH1506-1-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-ETH1506-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 15A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
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