Technische Details VS-ETU3006-1-M3 Vishay
Description: DIODE GEN PURP 600V 30A TO262-3, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 45 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-262-3, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.
Weitere Produktangebote VS-ETU3006-1-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| VS-ETU3006-1-M3 | Hersteller : VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA Mounting: THT Case: IPAK; TO262AA Leakage current: 0.25mA Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Capacitance: 20pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.35V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-ETU3006-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
Produkt ist nicht verfügbar |
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VS-ETU3006-1-M3 | Hersteller : Vishay Semiconductors |
Rectifiers 30A 600V Ultrafast 45ns |
Produkt ist nicht verfügbar |
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| VS-ETU3006-1-M3 | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA Mounting: THT Case: IPAK; TO262AA Leakage current: 0.25mA Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Capacitance: 20pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.35V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |