VS-FC420SA10 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 435A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 750µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
Description: MOSFET N-CH 100V 435A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
Power Dissipation (Max): 652W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 750µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
auf Bestellung 2793 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 55.93 EUR |
10+ | 49.69 EUR |
100+ | 43.47 EUR |
500+ | 37.09 EUR |
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Technische Details VS-FC420SA10 Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 435A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 435A (Tc), Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V, Power Dissipation (Max): 652W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 750µA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V.
Weitere Produktangebote VS-FC420SA10 nach Preis ab 47.97 EUR bis 56.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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VS-FC420SA10 | Hersteller : Vishay Semiconductors | Discrete Semiconductor Modules 100V 435A Module SOT-227 |
auf Bestellung 3042 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-FC420SA10 | Hersteller : VISHAY |
Description: VISHAY - VS-FC420SA10 - MOSFET-Transistor, n-Kanal, 435A, 100V, 0.0013 Ohm, 10V, 2.9V, SOT-227 tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 435A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 652W Gate-Source-Schwellenspannung, max.: 2.9V euEccn: NLR Verlustleistung: 652W productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0013ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm |
auf Bestellung 409 Stücke: Lieferzeit 14-21 Tag (e) |