VS-FC80NA20 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 200V 108A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
Description: MOSFET N-CH 200V 108A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
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Technische Details VS-FC80NA20 Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 200V 108A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V.
Weitere Produktangebote VS-FC80NA20
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VS-FC80NA20 | Hersteller : Vishay Semiconductors | Discrete Semiconductor Modules Output & SW Modules - SOT-227 IGBT |
Produkt ist nicht verfügbar |
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| VS-FC80NA20 | Hersteller : VISHAY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 200V; 80A; SOT227B; Ugs: ±30V; screw; 405W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 80A Case: SOT227B Topology: buck chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 9.6mΩ Pulsed drain current: 170A Power dissipation: 405W Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |