VS-GB200NH120N Vishay General Semiconductor - Diodes Division


Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 420A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1562 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details VS-GB200NH120N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 1200V 420A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ), NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, Current - Collector (Ic) (Max): 420 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1562 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.

Weitere Produktangebote VS-GB200NH120N

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
VS-GB200NH120N Hersteller : Vishay Semiconductors IGBT Modules Output & SW Modules - DIAP IGBT
Produkt ist nicht verfügbar