VS-GT100TP60N Vishay General Semiconductor - Diodes Division


Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 160A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 417 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 7.71 nF @ 30 V
auf Bestellung 22 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+184.81 EUR
10+ 167.48 EUR
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Technische Details VS-GT100TP60N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 600V 160A INT-A-PAK, Packaging: Bulk, Package / Case: INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: INT-A-PAK, IGBT Type: Trench, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 417 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 7.71 nF @ 30 V.

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VS-GT100TP60N Hersteller : Vishay Semiconductors IGBT Modules Output & SW Modules - IAP IGBT
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