VS-GT120DA65U

VS-GT120DA65U Vishay General Semiconductor - Diodes Division


VS-GT120DA65U.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 650V 167A 577W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 577 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V
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Technische Details VS-GT120DA65U Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 650V 167A 577W SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: Trench, Part Status: Obsolete, Current - Collector (Ic) (Max): 167 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 577 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V.

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VS-GT120DA65U VS-GT120DA65U Hersteller : Vishay Semiconductors vs-gt120da65u-1148378.pdf IGBT Transistors SW Mod SOT-227 IGBT
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