Technische Details VS-GT300YH120N Vishay
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: MOSFET half-bridge + serial diodes, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: Dual INT-A-Pak, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 720A, Technology: Trench, Mechanical mounting: screw.
Weitere Produktangebote VS-GT300YH120N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| VS-GT300YH120N | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: IGBT MOD 1200V 341A INT-A-PAK |
Produkt ist nicht verfügbar |
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| VS-GT300YH120N | Hersteller : Vishay Semiconductors |
IGBT Modules Output & SW Modules - DIAP IGBT |
Produkt ist nicht verfügbar |
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| VS-GT300YH120N | Hersteller : VISHAY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench Type of module: IGBT Semiconductor structure: diode/transistor Topology: MOSFET half-bridge + serial diodes Max. off-state voltage: 1.2kV Collector current: 300A Case: Dual INT-A-Pak Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 720A Technology: Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |