VS-GT400TH120U Vishay General Semiconductor - Diodes Division


VS-GT400TH120U.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 750A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2344 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 51.2 nF @ 30 V
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Technische Details VS-GT400TH120U Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 1200V 750A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 8), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, IGBT Type: Trench, Part Status: Obsolete, Current - Collector (Ic) (Max): 750 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2344 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 51.2 nF @ 30 V.