VS-HFA04TB60SPBF Vishay Semiconductors
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Technische Details VS-HFA04TB60SPBF Vishay Semiconductors
Description: DIODE GEN PURP 600V 4A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 42 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 3 µA @ 600 V.
Weitere Produktangebote VS-HFA04TB60SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-HFA04TB60SPBF | Hersteller : Vishay |
 Diode Switching 4A Automotive 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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VS-HFA04TB60SPBF | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
Produkt ist nicht verfügbar |