VS-HFA06TB120-N3 Vishay Semiconductors
auf Bestellung 1000 Stücke:
Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-HFA06TB120-N3 Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 6A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Weitere Produktangebote VS-HFA06TB120-N3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
VS-HFA06TB120-N3 | Hersteller : Vishay |
 Diode Switching 6A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
|
 |
VS-HFA06TB120-N3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
Produkt ist nicht verfügbar |