VS-HFA06TB120SR-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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Technische Details VS-HFA06TB120SR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Weitere Produktangebote VS-HFA06TB120SR-M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-HFA06TB120SR-M3 | Hersteller : Vishay Semiconductors |
Diodes - General Purpose, Power, Switching 1200V 6A IF TO-220AC 80A IFSM |
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