VS-HFA90NH40PBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 400V 210A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 210A
Supplier Device Package: D-67 HALF-PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 180 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
auf Bestellung 245 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 60.5 EUR |
| 10+ | 53.77 EUR |
| 100+ | 47.03 EUR |
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Technische Details VS-HFA90NH40PBF Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 210A D-67, Packaging: Bulk, Package / Case: D-67 HALF-PAK, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140 ns, Technology: Standard, Current - Average Rectified (Io): 210A, Supplier Device Package: D-67 HALF-PAK, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 180 A, Current - Reverse Leakage @ Vr: 2 mA @ 400 V.
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