VS-MBRB1035-M3

VS-MBRB1035-M3 Vishay General Semiconductor - Diodes Division


vs-mbrb1035-m3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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Technische Details VS-MBRB1035-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 35V 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 35 V.

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VS-MBRB1035-M3 Hersteller : Vishay Semiconductors vs_mbrb1035_m3-2897740.pdf Schottky Diodes & Rectifiers Schottky - D2PAK-e3
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