VS-MURB2020CT-1-M3

VS-MURB2020CT-1-M3 Vishay General Semiconductor - Diodes Division


vs-murb2020ct-m3.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO262AA
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
auf Bestellung 5430 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.78 EUR
50+ 2.23 EUR
100+ 1.77 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
2000+ 1.15 EUR
5000+ 1.09 EUR
Mindestbestellmenge: 10
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Technische Details VS-MURB2020CT-1-M3 Vishay General Semiconductor - Diodes Division

Description: DIODE ARRAY GP 200V 10A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 16 A, Current - Reverse Leakage @ Vr: 15 µA @ 200 V.

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VS-MURB2020CT-1-M3 VS-MURB2020CT-1-M3 Hersteller : Vishay Semiconductors vs-murb2020ct-m3.pdf Rectifiers 200V 2 x 10A IF TO-262AA 100A IFSM
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VS-MURB2020CT-1-M3 Hersteller : VISHAY vs-murb2020ct-m3.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 20V; 10Ax2; tube; Ifsm: 100A; IPAK,TO262AA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 10A x2
Max. load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: IPAK; TO262AA
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: tube
Produkt ist nicht verfügbar